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Model Number : RDN100N20
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 8600pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Description : N-Channel 200 V 10A (Ta) 35W (Tc) Through Hole TO-220FN
Drain-Source Voltage : 200 V
Gate-Source Voltage : ±30 V
Drain Current (Continuous) : 10 A
Avalanche Current : 10 A
Avalanche Energy : 120 mJ
Storage Temperature : −55 to +150 °C
Switching (200V, 10A)
RDN100N20
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings (Ta=25°C)
Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | 200 | V | |
Gate-Source Voltage | VGSS | ±30 | V | |
Drain Current | Continuous | ID | 10 | A |
Pulsed | IDP *1 | 40 | A | |
Reverse Drain Current | Continuous | IDR | 10 | A |
Pulsed | IDRP *1 | 40 | A | |
Avalanche Current | IAS *2 | 10 | A | |
Avalanche Energy | EAS *2 | 120 | mJ | |
Total Power Dissipation (TC=25°C) | PD | 35 | W | |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | −55 to +150 | °C |
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
External dimensions (Unit : mm)
Equivalent circuit
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Stock Offer (Hot Sell)
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RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A) Images |