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RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)

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RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)

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Model Number : RDN100N20

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 200 V 10A (Ta) 35W (Tc) Through Hole TO-220FN

Drain-Source Voltage : 200 V

Gate-Source Voltage : ±30 V

Drain Current (Continuous) : 10 A

Avalanche Current : 10 A

Avalanche Energy : 120 mJ

Storage Temperature : −55 to +150 °C

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Switching (200V, 10A)

RDN100N20

Features

1) Low on-resistance.

2) Low input capacitance.

3) Exellent resistance to damage from static electricity.

Application

Switching

Structure

Silicon N-channel

MOS FET

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±30 V
Drain Current Continuous ID 10 A
Pulsed IDP *1 40 A
Reverse Drain Current Continuous IDR 10 A
Pulsed IDRP *1 40 A
Avalanche Current IAS *2 10 A
Avalanche Energy EAS *2 120 mJ
Total Power Dissipation (TC=25°C) PD 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C

External dimensions (Unit : mm)

Equivalent circuit

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
China RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A) wholesale

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