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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

Brand Name : IRF

Model Number : IRLML6402TRPBF

Certification : Original Factory Pack

Place of Origin : Japan

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : P-Channel 20 V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

Drain- Source Voltage : -20 V

Continuous Drain Current, VGS @ -4.5V : -2.2 A

Pulsed Drain Current  : -22 A

Power Dissipation : 1.3 W

Linear Derating Factor : 0.01 W/°C

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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF


♦Ultra Low On-Resistance

♦P-Channel MOSFET

♦SOT-23 Footprint

♦Low Profile (<1.1mm)

♦Available in Tape and Reel

♦Fast Switching 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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