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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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ChongMing Group (HK) Int'l Co., Ltd

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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Brand Name : ISC

Model Number : BT136-600E

Certification : Original Factory Pack

Place of Origin : China

MOQ : 4000pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal,

Supply Ability : 240000PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : Glass passivated, sensitive gate triacs

Repetitive peak off-state voltage : 600 V

Average on-state current : 4 A

Non-repetitive peak on-state current : 25 A

Storage temperature : -45～150 ℃

Package : TO-220AB

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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Features

·With TO-220AB package

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

QUICK REFERENCE DATA

SYMBOL	PARAMETER	VALUE	UNIT
VDRM	Repetitive peak off-state voltage	600	V
VRRM	Repetitive peak off-state voltage	600	V
IT(AV)	Average on-state current	4	A
ITSM	Non-repetitive peak on-state current	25	A
Tstg	Storage temperature	-45～150

PIN CONFIGURATION SYMBOL

Triacs BT136 series E sensitive gate

MECHANICAL DATA

Product Tags:

multi emitter transistor

silicon power transistors

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate Images

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