MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
Applications
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)
| Characteristics |
Symbol |
Rating |
Unit |
| Drain-source voltage |
VDSS |
600 |
V |
| Gate-source voltage |
VGSS |
±30 |
V |
| Drain current (DC) (Note 1) |
ID |
9.7 |
A |
| Drain current (pulsed) (Note 1) |
IDP |
38.8 |
A |
| Power dissipation (Tc = 25℃) |
PD |
80 |
W |
| Single-pulse avalanche energy (Note 2) |
EAS |
121 |
mJ |
| Avalanche current |
IAR |
2.5 |
A |
| Reverse drain current (DC) (Note 1) |
IDR |
9.7 |
A |
| Reverse drain current (pulsed) (Note 1) |
IDRP |
38.8 |
A |
| Channel temperature |
Tch |
150 |
℃ |
| Storage temperature |
Tstg |
-55 to 150 |
℃ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note
1: Ensure that the channel temperature does not exceed 150℃. Note
2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A
Stock Offer (Hot Sell)
| Part No. |
Quantity |
Brand |
D/C |
Package |
| SKCH28/06 |
389 |
|
15+ |
MODULE |
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635 |
|
14+ |
MODULE |
| SKD62/16 |
638 |
|
13+ |
MODULE |
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287 |
|
16+ |
MODULE |
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383 |
|
13+ |
MODULE |
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317 |
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13+ |
MODULE |
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458 |
|
14+ |
MODULE |
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278 |
|
16+ |
MODULE |
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290 |
|
14+ |
MODULE |
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293 |
|
13+ |
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302 |
|
16+ |
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608 |
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14+ |
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227 |
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13+ |
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251 |
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16+ |
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260 |
|
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224 |
|
14+ |
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503 |
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434 |
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13+ |
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| SKKD46/12 |
659 |
|
16+ |
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| SKKE81/12E |
515 |
|
14+ |
MODULE |
| SKKH106/16E |
200 |
|
16+ |
MODULE |
| SKKH57/16E |
719 |
|
16+ |
MODULE |
| SKKT162/16E |
425 |
|
16+ |
MODULE |
| SKKT162/18E |
392 |
|
16+ |
MODULE |
| SKKT210/12E |
326 |
|
16+ |
MODULE |
| SKKT250/14E |
329 |
|
16+ |
MODULE |
| SKKT330/16E |
296 |
|
16+ |
MODULE |
| SKKT430/16E |
254 |
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15+ |
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236 |
|
16+ |
MODULE |
| SKKT57/14E |
590 |
|
16+ |
MODULE |
Product Tags:
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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS Images
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